Formulated for high-performance NO₂ detection, our MoS₂ ink offers exceptional sensitivity (ppb-level), strong selectivity, and humidity resistance, making it suitable for integration into Metal-Oxide Semiconductor (MOS) gas sensors.

Specifications: Activated MoS2 flakes distributed in the IPA solution. Distribution solution and the flake sizes can be customized upon request. Standard ink solution includes ~5-10 μm flakes. Ink solution concentration can be customized.

We create hybrid nanopores with atomically sharp triangular and hexagonal shapes. Both single pores and arrays are available, with high reproducibility. Built on WS₂ membranes, they offer excellent stability and precision. Ideal for ionic current measurements and molecular-scale analysis.

Specifcations: Single and arrays of nanopores on 5-10 nm MoS₂ and WS₂ membrane with a variety of diameters from 1-500 nm with atomically sharp edges. Diameter sizes and pitches can be designed according to the customer’s needs.

We produce ultra-sharp 2D material edges suitable for nanophotonics, EUV lithography, and X-ray imaging applications, where high edge definition and optical precision are required.

Specifications: Atomically sharp channels and grating structures transferred on the desired substrates. Potential substrates include Silicon (Si), silicon dioxide (SiO₂), silicon nitride (SiN), hexagonal boron nitride (hBN), Lithium niobate (LiNbO₃), Silicon Carbide (SiC), or any other TMD materials. Depending on the customer design and the substrate, we can produce 100´100 um structures in lateral dimensions.

Our precision-manufactured calibration marks are designed for electron beam lithography systems, enhancing alignment accuracy and repeatability in nanoscale patterning processes.

Specifications: Ultrasharp edges on the calibration marks to determine the beam size and accurately calibrate the calibration. These calibration marks are fabricated on the desired substrate to reach the desired contrast.

Specifications: Expert services for various cleanroom processes.

• High-quality thin film coatings on Silicon or any desired substrate
  • Coating materials can be SiO ₂ , SiN, Au, Ni, Ti, Cr, Ag
• Electron beam lithography (EBL)
  • help designing and nanofabricating sub-15 nm structures on the desired substrate.
  • exposures up to 8-inch wafers or fabricate them on small chips.
• Transfer desired patterns to various substrates
  • dry etching process to pattern substrates such as Si, SiO _2, and SiC.
  • nanostructure fabrication and dry etching of SiC.